HITACHI 전자현미경
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SU8010

주요특징

  • Ultra-high resolution imaging, even at ultra low accelerating voltage (SE resolution 1.3nm at 1.0kV)
  • A wide range of signal detection systems
  • User-friendly GUI, console and wide-format monitor for comfortable operation
  • Wide range of optional accessories to meet customer-specific needs
  • SU8010 has excellent performance as the entry level model in the SU8000 series. The combination of Semi-in-lens type objective lens and cold FE-gun with small energy spread delivers ultra resolution imaging performance and flexible SE-BSE signal mixing using Hitachi's detector technology for absolute surface information. Z-number contrast and charge suppression.

제품사양(Specification)

(1) Resolution
1.0nm at 15kV / 1.3nm at 1kV
(2) Magnification
On photo mode - x20 to x800,000
On display mode - x60 to x2,000,000
(3) Accelerating voltage
0.1 to 30kV
(4) Anode heating system / Aperture heating system (HITACHI patent)
(5) Detectors
Dual Secondary Electron Detector (Upper/Lower)
SE/BSE Signal Mixing Function (Upper detector)
Semiconductor type BSED (option)
YAG type BSED (option)
STEM detector for BF/DF-STEM (option)
BF-STEM aperture (option)
Cathodoluminescence Detector (option)
EBIC image observation unit (option)
(6) Maximum loading sample size
100mm dia. / 150mm dia.(option)
(7) Image saving
Max. 5,120 x 3,840 pixels

SU8220/30/40

주요특징

  • The ultimate SEM source for high resolution imaging at low acceleration voltage with unmatched beam brightness and stability
  • The newly designed Hitachi CFE gun complements the inherent high resolution and brightness of conventional CFE with increased probe current and beam stability
  • Long-term, continuous operation and elemental analysis are now routine with the new CFE source
  • The beam decelertion voltage can be optimized to yield a landing voltage of 10-2000V enabling the observation of beam sensitive samples, such as organic materials or polymers, in the natural state without beam damage or sample deformation
  • A new selective energy filtering system for the top detector offers fine contrast differentiation even at low accelerating voltages

제품사양(Specification)

(1) Resolution
0.8nm at 15kV / 1.1nm at 1kV
(2) Magnification
0.8nm at 15kV / 1.1nm at 1kV
(3) Accelerating voltage
0.01 to 30kV
(4) Anode heating system / Aperture heating system (HITACHI patent)
(5) Detectors
Triple Secondary Electron Detector (Top/Upper/Lower)
SE/BSE Signal Mixing Function (Upper detector)
Top filter function (Top detector)*
Semiconductor type BSED*
YAG type BSED*
STEM detector for BF/DF-STEM*
BF-STEM aperture*
(6) Image saving
Max. 5,120 x 3,840 pixels

SU9000

주요특징

  • Superior low-kV performance for observation of beam sensitive materials.
  • Next generation Hitachi In-lens SEM optics allows for routine observation at 1 million times.
  • Newly designed CFE GUN provides high brightness and extremly stable emission current.
  • Improved vacuum technology that allows for ultra-high vacuum levels for reduced sample contamination.
  • Highly engineered instrument enclosure featuring both superior strength and stability to allow for high resolution imaging in a broad range of environmental conditions
  • Newly designed objective lens provides for high resolution imaging at low acceleration voltage.
  • Side entry sample exchange system increases throughput by reducing the time required to change samples and by automatically positioning the sample at the correct WD.

제품사양(Specification)

(1) Resolution
0.4nm at 30kV (Sample height = 1.0mm)
1.2nm at 1kV (Sample height = 2.0mm)
(2) Magnification
On photo mode - x80 to x3,000,000
On display mode - x220 to x8,000,000
(3) Accelerating voltage
0.5 to 30kV
(4) Anode heating system / Aperture heating system (HITACHI patent)
(5) Detectors
Secondary Electron Detector
Top detector (option)
BF/DF Duo-STEM Detector (option)
(6) Image saving
Image saving